BF1009S
BF1009S...
Silicon N_Channel MOSFET Tetrode
- For low noise, high gain controlled input stage up to 1 GHz
- Operating voltage 9 V
- Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF1009S BF1009SR
Maximum Ratings Parameter
Package SOT143 SOT143R 1=S 1=D 2=D 2=S
Pin Configuration 3=G2 3=G1 4=G1 4=G2 Value 12 25 10 3 200 200 Tstg Tch -55 ... 150 150
Marking JLs JLs
Unit V m A V m W
Symbol VDS ID ±IG1/2SM +VG1SE Ptot
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1009S, BF1009SR TS ≤ 94 °C, BF1009W Storage temperature Channel temperature
°C
Note: It is not remended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004
BF1009S...
Thermal Resistance Parameter Channel
- soldering point 1) BF1009S, BF1009SR BF1009SW Symbol
Rthchs ≤ 370 ≤ 280
Value
Unit...
