| Part Number | BF1005 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified acc. - soldering point1) Symbol Rthchs Value ≤ 370 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 650 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = . |
BF1005 Datasheet and Specifications PDF
The BF1005 is a Silicon N-Channel MOSFET Tetrode.
| Part Number | BF1005 Datasheet |
|---|---|
| Description | ON/OFF Dimming LED Driver IC |
| Manufacturer | BYD |
| Overview |
The BF1005 is a high performance AC/DC on/off LED driver with four-stages dimming. It uses PFM method to build DCM fly-back power supplies. It operates in primary-side sensing and regulation while rem.
* 4 stages dimming function with ordinary switch * Typical 5% output Current Accuracy * Constant frequency start-up mode accelerate start-up process * Eliminates Opto-coupler and TL431 * Built-in Short Circuit Protection, VDD Over Voltage Protection * Cycle-by-Cycle Current Limiting * VDD Under Volt. |
| Part Number | BF1005 Datasheet |
|---|---|
| Description | Silicon N-Channel MOSFET Tetrode |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensiti. acteristics Drain-source breakdown voltage typ. 100 10 1 max. 12 13 50 1.5 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA. |