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BFG196
NPN Silicon RF Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
Power amplifier for DECT and PCN Systems fT = 7.5 GHz
3 2 1
VPS05163
F = 1.5 dB at 900 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG196
Maximum Ratings Parameter
Marking BFG196 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 100 12 800 150 -65 ... 150 -65 ...
BFG196 Datasheet
