BFG196
NPN Silicon RF Transistor
For low noise, low distortion broadband
4 amplifiers in antenna and telemunication systems up to 1.5 GHz at collector currents from 20 m A to 80 m A
Power amplifier for DECT and PCN Systems f T = 7.5 GHz
3 2 1
VPS05163
F = 1.5 d B at 900 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG196
Maximum Ratings Parameter
Marking BFG196 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 100 12 800 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 90 °C 1) Junction temperature Ambient temperature Storage temperature m A m W °C
Thermal Resistance Junction
- soldering point 2) Rth JS
75
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R th JA please refer to...
