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BFG193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
4
F = 1.3 dB at 900 MHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG193
Maximum Ratings Parameter
Marking BFG193 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 12 20 20 2 80 10 600 150 -65 ... 150 -65 ...
BFG193 Datasheet
