BFG193 Description
BFG193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz 4 F = 1.3 dB at 900 MHz 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Unit 2 Jun-27-2001 BFG193 at TA = 25°C, unless otherwise specified.