BFG19S
BFG 19S
NPN Silicon RF Transistor
- For low noise, low distortion broadband amplifiers in antenna and telemunications systems up to 1.5GHz at collector currents from 10 m A to 70 m A
- CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 19S BFG19S Q62702-F1359 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 3 100 12 W 1 150
- 65 ... + 150
- 65 ... + 150 ≤ 75 °C m A Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 75 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
Rth JS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Dec-13-1996
BFG 19S
Electrical Characteristics at...
