BFG194
BFG 194
PNP Silicon RF Transistor
- For low distortion broadband amplifiers in antenna and telemunications systems up to 1.5 GHz at collector currents from 20m A to 80m A
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 194 BFG194 Q62702-F1321 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 3 100 10 m W 1000 150
- 65 ... + 150
- 65 ... + 150 ≤ 75 °C m A Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 75 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
Rth JS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Aug-22-1996
BFG 194
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics...
