BFG196
BFG 196
NPN Silicon RF Transistor
- For low noise, low distortion broadband amplifiers in antenna and telemunications systems up to 1.5GHz at collector currents from 20m A to 80m A
- Power amplifier for DECT and PCN systems
- f T = 7.5GHz
F = 1.5 d B at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 196 BFG196 Q62702-F1292 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 100 12 m W 800 150
- 65 ... + 150
- 65 ... + 150 ≤ 75 °C m A Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 90 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
Rth JS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Dec-13-1996...
