BFG10X Description
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter Marking code: 1 BFG10W/X fpage 4 3 2 MBK523 Top view Fig.1 SOT343.
BFG10X Key Features
- High efficiency
- Small size discrete power amplifier
- 900 MHz and 1.9 GHz operating areas
- Gold metallization ensures excellent reliability