BFG10X
Overview
- High efficiency
- Small size discrete power amplifier
- 900 MHz and 1.9 GHz operating areas
- Gold metallization ensures excellent reliability. APPLICATIONS
- Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter Marking code: T5. 1 BFG10W/X fpage 4 3 2 MBK523 Top view Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms f (GHz) 1.9 0.9 0.9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 102 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN. MAX. 20 10 2.5 250 250 400 +150 175 V V V mA mA mW °C °C UNIT VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB) ≥5 ≥10 ≥12.5 ηc (%) ≥50 ≥50 ≥50
