Part BFG11
Description NPN 2 GHz RF power transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 79.92 KB
NXP Semiconductors
BFG11

Overview

handbook, 2 columns 4 3 2 MSB014 BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7).

  • High power gain
  • High efficiency
  • Small size discrete power amplifier
  • 1.9 GHz operating area
  • Gold metallization ensures excellent reliability. APPLICATIONS
  • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter 1 Top view BFG11; BFG11/X