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BFG11 - NPN 2 GHz RF power transistor

General Description

NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.

BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143.

Key Features

  • High power gain.
  • High efficiency.
  • Small size discrete power amplifier.
  • 1.9 GHz operating area.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter 1 Top view BFG11; BFG11/X DESCRIPTION NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.