Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X NPN 2 GHz RF power transistor
Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
Features
- High power gain
- High efficiency
- Small size discrete power amplifier
- 1.9 GHz operating area
- Gold metallization ensures excellent reliability. APPLICATIONS
- mon emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter
1 Top view
BFG11; BFG11/X
DESCRIPTION NPN silicon planar epitaxial transistors...