NXP Semiconductors BFG11
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8. 1995 Apr 07 5 Philips Semiconductors Product specification NPN 2 GHz RF power transistor SPICE parameters for the BFG11 crystal SEQUENCE No.| Part No. | BFG11 |
|---|---|
| Datasheet | BFG11 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 2 GHz RF power transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● High efficiency
● Small size discrete power amplifier
● 1.9 GHz operating area
● Gold metallization ensures excellent reliability.
APPLICATIONS
● Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter 1 Top view BFG11; BFG11/XDESCRIPTION
NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. MARKING TYPE NUMBER BFG11 BFG11/X CODE N72 N73DESCRIPTION
handbook, 2 columns 4 3 2 MSB014 BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle < 1 : 8 f (GHz) 1.9 VCE (V) 3.6 PL (mW) 400 Gp (dB) ≥4 ηc (%) ≥50 1995 Apr 07 2 Philips Semiconductors Product specification NPN 2 GHz RF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
