BFG11 Description
NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a mon-emitter test circuit (see Fig.7). MODE OF OPERATION Pulsed, class-AB, duty cycle < 1.
BFG11 Key Features
- High power gain
- High efficiency
- Small size discrete power amplifier
- 1.9 GHz operating area
- Gold metallization ensures excellent reliability
BFG11 Applications
- mon emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN BFG11 (see Fig.1) 1 2 3 4 collector base emitter emitter