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BFG11 Datasheet NPN 2 Ghz Rf Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Apr 07 Philips Semiconductors Philips.

General Description

NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package.

MARKING TYPE NUMBER BFG11 BFG11/X CODE N72 N73 DESCRIPTION handbook, 2 columns 4 3 2 MSB014 BFG11/X (see Fig.1) 1 2 3 4 collector emitter base emitter Fig.1 SOT143.

QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a mon-emitter test circuit (see Fig.7).

Key Features

  • High power gain.
  • High efficiency.
  • Small size discrete power amplifier.
  • 1.9 GHz operating area.
  • Gold metallization ensures excellent reliability.

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