BFG10W Description
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter fpage 4 3 1 Top view 2 MBK523 Marking code: QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a mon-emitter test circuit.
BFG10W Key Features
- High efficiency
- Small size discrete power amplifier
- 900 MHz and 1.9 GHz operating
- Gold metallization ensures
BFG10W Applications
- mon emitter class-AB operation in hand-held radio equipment up to 1.9 GHz