• Part: BFG10W
  • Description: UHF power transistor
  • Manufacturer: NXP Semiconductors
  • Size: 55.89 KB
Download BFG10W Datasheet PDF
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Datasheet Summary

DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors UHF power transistor Product specification BFG10W/X Features - High efficiency - Small size discrete power amplifier - 900 MHz and 1.9 GHz operating areas - Gold metallization ensures excellent reliability. APPLICATIONS - mon emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter fpage 1 Top view MBK523 Marking code:...