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BFG10W - UHF power transistor

General Description

NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.

Marking code: T5.

Fig.1 SOT343.

Key Features

  • High efficiency.
  • Small size discrete power amplifier.
  • 900 MHz and 1.9 GHz operating areas.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors UHF power transistor Product specification BFG10W/X FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter fpage 4 3 1 Top view 2 MBK523 Marking code: T5. Fig.1 SOT343. QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a common-emitter test circuit.