BFG10 Description
NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10; QUICK REFERENCE DATA RF performance at Tamb = 25 °C in a mon-emitter test circuit (see Fig.7).
BFG10 Key Features
- High power gain
- High efficiency
- Small size discrete power amplifier
- 1.9 GHz operating area
- Gold metallization ensures excellent reliability