BFG10 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor Features - High power gain - High efficiency - Small size discrete power amplifier - 1.9 GHz operating area - Gold metallization ensures excellent reliability. APPLICATIONS - mon emitter class-AB operation in hand-held radio equipment at 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10; BFG10/X BFG10 (see Fig.1) 1 2 3 4...