BFG19S
BFG 19S
NPN Silicon RF Transistor
For low noise, low distortion broadband
4 amplifiers in antenna and telemunication systems up to 1.5 GHz at collector currents from 10 m A to 70 m A
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG 19S
Maximum Ratings Parameter
Marking BFG19S 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT-223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 15 20 20 3 100 12 1 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation , TS 75 °C 1) Junction temperature Ambient temperature Storage temperature m A W °C
Thermal Resistance Junction
- soldering point Rth JS
75
K/W
1T is measured on the collector lead at the soldering point to the pcb S
Oct-26-1999
BFG 19S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics...
