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BFG11W Datasheet NPN 2 Ghz Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product.

General Description

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitter DESCRIPTION 4 3 MBK523 Fig.1 Simplified outline.

QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon-emitter test circuit.

Key Features

  • High power gain.
  • High efficiency.
  • Small size discrete power amplifier.
  • 1.9 GHz operating area.
  • Gold metallization ensures excellent reliability.
  • Linear and non-linear operation.

BFG11W Distributor