BFG11W Description
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, δ < 1.
BFG11W Key Features
- High power gain
- High efficiency
- Small size discrete power amplifier
- 1.9 GHz operating area
- Gold metallization ensures excellent reliability
- Linear and non-linear operation
BFG11W Applications
- mon emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS