BFG11W
Overview
- High power gain
- High efficiency
- Small size discrete power amplifier
- 1.9 GHz operating area
- Gold metallization ensures excellent reliability
- Linear and non-linear operation. APPLICATIONS
- Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
- Driver for DCS
- DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X
