Datasheet4U Logo Datasheet4U.com

BFG11W - NPN 2 GHz power transistor

General Description

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

Fig.1 Simplified outline.

Key Features

  • High power gain.
  • High efficiency.
  • Small size discrete power amplifier.
  • 1.9 GHz operating area.
  • Gold metallization ensures excellent reliability.
  • Linear and non-linear operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BFG135A NPN Silicon RF Transistor Siemens Semiconductor Group
BFG135A NPN Silicon RF Transistor Infineon Technologies AG
BFG193 NPN Transistor INCHANGE
BFG193 NPN Silicon RF Transistor Siemens Semiconductor Group
BFG193 NPN Silicon RF Transistor Infineon Technologies AG

Other Datasheets by NXP Semiconductors

Part Number Description
BFG11 NPN 2 GHz RF power transistor
BFG10 NPN 2 GHz RF power transistor
BFG10W UHF power transistor
BFG10X UHF power transistor
BFG135 NPN 7GHz wideband transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability • Linear and non-linear operation. APPLICATIONS • Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS. • Driver for DCS 1800. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.