NXP Semiconductors BFG11W
The transistors are capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions at f = 1.9 GHz: tp = 1.25 ms, δ = 1 : 8 at VCE = 7 V and tp = 5 ms, δ = 1 : 2 at VCE = 4.5 V.| Part No. | BFG11W |
|---|---|
| Datasheet | BFG11W Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 2 GHz power transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● High efficiency
● Small size discrete power amplifier
● 1.9 GHz operating area
● Gold metallization ensures excellent reliability
● Linear and non-linear operation.
APPLICATIONS
● Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.● Driver for DCS 1800.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package. Marking code: S4 1 Top view 2 handbook, halfpage BFG11W/X PINNING - SOT343 PIN 1 2 3 4 collector emitter base emitterDESCRIPTION
4 3 MBK523 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, δ < 1 : 2; tp = 5 ms f (GHz) 1.9 VCE (V) 3.6 PL (mW) 400 Gp (dB) ≥6 ηc (%) ≥60 1996 Jun 04 2 Philips Semiconductors Product specification NPN 2 GHz power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot T...
