Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11W/X NPN 2 GHz power transistor
Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
Features
- High power gain
- High efficiency
- Small size discrete power amplifier
- 1.9 GHz operating area
- Gold metallization ensures excellent reliability
- Linear and non-linear operation. APPLICATIONS
- mon emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
- Driver for DCS 1800. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.
Marking...