BFN36 Datasheet | Infineon

BFN36, BFN38 NPN Silicon High-Voltage Transistors Suitabled for video output stages in TV sets and 4 switching power supplies High breakdown voltage Low collector-emitter saturation voltage plementary types: BFN37, BFN39 (PNP) 3 2 1 VPS05163 Type BFN36 BFN38 Maximum Ratings Parameter Marking BFN 36 BFN 38 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BFN36 250 250 5 BFN38 300 300 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 200 500 100 200 1.5 150 -65 ... 150 m A W °C Thermal Resistance Junction - soldering point1) Rth JS 17 K/W 1For calculation of R th JA please refer to Application Note Thermal Resistance Nov-30-2001 BFN36, BFN38 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V IC = 30 m A, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 m A, IB = 2 m A Base-emitter saturation voltage 1) IC = 20 m A, IB = 2 m A h FE ICBO V(BR)CEO typ. max. Unit V 250 300 n A 100 100 µA 20 20 100 n A 25 40 V 0.4 0.5 0.9 BFN36 BFN38 V(BR)CBO BFN36 BFN38 V(BR)EBO 250 300 5 BFN36 BFN38 ICBO BFN36...