• Part: BFN37
  • Description: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
  • Category: Transistor
  • Manufacturer: Zetex Semiconductors
  • Size: 68.71 KB
Download BFN37 Datasheet PDF
Zetex Semiconductors
BFN37
BFN37 is SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR manufactured by Zetex Semiconductors.
FEATURES - High VCEO and Low saturation voltages APPLICATIONS - Suitable for video output stages in TV sets - Switching power supplies PLEMENTARY TYPE:BFN36 PARTMARKING DETAIL:BFN37 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) 25 40 40 100 2.5 MHz p F MIN. -250 -250 -5 -100 -20 -100 -0.4 -0.9 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. UNIT V V V n A VALUE -250 -250 -5 -500 -2 -55 to +150 CONDITIONS. IC=-100µ A IC=-1m A IE=-100µ A VCB=-200V VCB=-200V † VEB=-4V IC=-20m A, IB=-2m A- IC=-20m A, IB=-2m A- IC=-1m A, VCE=-10V- IC=-10m A, VCE=-10V- IC=-30m A, VCE=10V- IC=-20m A, VCE=-10V f=100MHz VCB=-30V, f=1MHz UNIT V V V m A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). µA n A V V Static Forward h FE Current Transfer Ratio Transition Frequency Output Capacitance f T Cobo †Tamb =150°C - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet. 3 -...