BFN37
BFN37 is SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR manufactured by Zetex Semiconductors.
FEATURES
- High VCEO and Low saturation voltages APPLICATIONS
- Suitable for video output stages in TV sets
- Switching power supplies PLEMENTARY TYPE:BFN36 PARTMARKING DETAIL:BFN37
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) 25 40 40 100 2.5 MHz p F MIN. -250 -250 -5 -100 -20 -100 -0.4 -0.9 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. UNIT V V V n A VALUE -250 -250 -5 -500 -2 -55 to +150 CONDITIONS. IC=-100µ A IC=-1m A IE=-100µ A VCB=-200V VCB=-200V VEB=-4V IC=-20m A, IB=-2m A- IC=-20m A, IB=-2m A- IC=-1m A, VCE=-10V- IC=-10m A, VCE=-10V- IC=-30m A, VCE=10V- IC=-20m A, VCE=-10V f=100MHz VCB=-30V, f=1MHz UNIT V V V m A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
µA n A V V
Static Forward h FE Current Transfer Ratio Transition Frequency Output Capacitance f T Cobo
Tamb =150°C
- Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet. 3
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