BFN36 Datasheet | Zetex Semiconductors

FEATURES : - High VCEO and Low saturation voltage APPLICATIONS: - Suitable for video output stages in TV sets - Switching power supplies PLEMENTARY TYPE - BFN37 PARTMARKING DETAILS - BFN36 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 250 250 5 500 2 -55 to +150 UNIT V V V m A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) 25 40 40 70 1.5 MHz p F MIN. 250 250 5 100 20 100 0.4 0.9 TYP. MAX. V V V n A n A V V UNIT CONDITIONS. IC=100µ A IC=1m A IE=100µ A VCB=200V VCB=200V, Tamb=150°C VEB=4V IC=20m A, IB=2m A IC=20m A, IB=2m A IC=1m A, VCE=10V- IC=10m A, VCE=10V- IC=30m A, VCE=10V- IC=20m A, VCE=10V f=100MHz VCB=30V,f=1MHz µA Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance f T Cobo - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 -...