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BSO613SPV - SIPMOS Small-Signal-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • BSO613SPV Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current S S S G 1 2 3 4 Top View 8 7 6 5 P-Channel Enhancement mode Avalanche rated dv/dt rated VDS RDS(on) ID D D D D -60 0.13 -3.44 V W.
  • A SIS00062 Type BSO613SPV Package SO 8 Ordering Code Q67042-S4021 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -3.44 -13.8 150 0.25 6 Unit A ID ID puls EAS EAR dv/.

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Datasheet Details

Part number BSO613SPV
Manufacturer Infineon Technologies AG
File Size 90.00 KB
Description SIPMOS Small-Signal-Transistor
Datasheet download datasheet BSO613SPV Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data SIPMOS® Small-Signal-Transistor Features · BSO613SPV Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current S S S G 1 2 3 4 Top View 8 7 6 5 P-Channel Enhancement mode Avalanche rated dv/dt rated VDS RDS(on) ID D D D D -60 0.13 -3.44 V W · · · A SIS00062 Type BSO613SPV Package SO 8 Ordering Code Q67042-S4021 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -3.44 -13.8 150 0.25 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse mJ I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -3.