BTS110 Datasheet PDF - Infineon Technologies AG TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic) Specs

BTS110 - TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Features

q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol.

Datasheet Details

Part number	BTS110
Manufacturer	Infineon Technologies AG
File Size	560.59 KB
Description	TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
Datasheet	BTS110 Datasheet
Additional preview pages of the BTS110 datasheet.

📁 Similar Datasheet

BTS110 - TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)

BTS112A - TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)

BTS113A - TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)

BTS114A - TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)

BTS115A - TEMPFET (N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)

BTS117 - Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) (Siemens Semiconductor Group)

BTS117TC - Smart Low Side Power Switch (Infineon Technologies)

BTS100 - Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) (Siemens Semiconductor Group)

BTS120 - MOSFET (Siemens Semiconductor Group)

BTS121A - MOSFET (Siemens Semiconductor Group)

Full PDF Text Transcription

Click to expand full text

TEMPFET® BTS 110 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 3 1 2 Pin 1 G 2 D 3 S Type BTS 110 VDS 100 V ID 10 A RDS(on) 0.2 Ω Package TO-220AB Ordering Code C67078-A5008-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 10 1.75 40 37 500 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ...

Published: Apr 17, 2005 |