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BTS112A - TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)

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Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Features

  • q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbo.

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Datasheet Details

Part number BTS112A
Manufacturer Infineon Technologies AG
File Size 579.28 KB
Description TEMPFET(N-channel Enhancement mode Temperature sensor with thyristor characteristic)
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Full PDF Text Transcription

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TEMPFET® BTS 112 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electricalIy shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 112A VDS 60 V ID 12 A RDS(on) 0.15 Ω Package TO-220AB Ordering Code C67078-S5014-A3 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 33 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 60 60 ± 20 12 2.5 48 27 400 40 – 55 ... + 150 E 55/150/56 K/W ≤ 3.1 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ...
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