BTS117 Description
N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Fully protected by embedded protected functions. +150 50 1000 3000 °C W mJ V TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 3.5 A Electro static discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn.
BTS117 Key Features
- Logic Level Input
- Input Protection (ESD)
- Thermal Shutdown
- Overload protection
- Short circuit protection
- Overvoltage protection
- Current limitation
- Status feedback with external input resistor
- Analog driving possible
- All kinds of resistive, inductive and capacitive loads in switching or linear
BTS117 Applications
- µC patible power switch for 12 V and 24 V DC applications