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BTS117 Datasheet Smart Lowside Power Switch

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: HITFET® BTS 117 Smart Lowside Power Switch.

General Description

N channel vertical power FET in Smart SIPMOS ® chip on chip technology.

Fully protected by embedded protected functions.

V bb + LOAD M Drain 2 dv/dt limitation Current lim itation Overvoltage protection 1 IN ESD Overload protection Overtemperature protection Short circuit circuit Short protection protection Source 3 HIT F ET ® Semiconductor Group Page 1 13.07.1998 BTS 117 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V Symbol Value 60 32 mA no limit | IIN | ≤ 2 Unit V VDS VDS(SC) IIN VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation Tj Tstg Ptot EAS - 40 ...

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • Thermal Shutdown.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current limitation.
  • Status feedback with external input resistor.
  • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 mΩ 1000 mJ.

BTS117 Distributor