BTS149 Datasheet | Infineon

Features - Logic Level Input - Input Protection (ESD) - =Thermal shutdown with latch - Overload protection - Short circuit protection - Overvoltage protection - Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 30 19 V mΩ A A 6000 m J limitation - Status feedback with external input resistor - Analog driving possible Application - All kinds of resistive, inductive and capacitive loads in switching or linear applications - µC patible power switch for 12 V and 24 V DC applications - Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions. V bb + LOAD D rain IN dv /d t lim ita tio n C u rre n t lim ita tio n O ve rvoltag e p rotection O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit p protection ro te ctio n S o u rce H IT F E T Page 1 2004-02-02 BTS 149 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoad Dump2) = VA + VS VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 Ω, ID =0,5- 19A td = 400 ms, RI = 2 Ω, ID = 19A DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 VLD 110 92 E 40/150/56 3000 V EAS 6000 m J Tj Tstg Ptot Symbol VDS VDS(SC) IIN no limit | IIN | ≤...