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BTS149 - Smart Lowside Power Switch

General Description

N channel vertical power FET in Smart SIPMOS  chip on chip technology.

Fully protected by embedded protected functions.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • =Thermal shutdown with latch.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 30 19 V mΩ A A 6000 mJ limitation.
  • Status feedback with external input resistor.
  • Analog driving possible Applicati.

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Datasheet Details

Part number BTS149
Manufacturer Infineon Technologies AG
File Size 309.41 KB
Description Smart Lowside Power Switch
Datasheet download datasheet BTS149 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HITFET=BTS 149 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 30 19 V mΩ A A 6000 mJ limitation • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology.