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BTS410F2E3062A - Smart Highside Power Switch

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Key Features

  • Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 42 V 220 mΩ 1.8 A 2.7 A TO-220AB/5 5 5 1 Straight leads 1 5 Standard SMD.
  • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads.
  • Most suitable for inductive loads.
  • Replaces electromechanical relays, fuses and discrete circuits.

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Datasheet Details

Part number BTS410F2E3062A
Manufacturer Infineon Technologies AG
File Size 318.06 KB
Description Smart Highside Power Switch
Datasheet download datasheet BTS410F2E3062A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PROFET® BTS 410 F2 Smart Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 65 V 4.7 ... 42 V 220 mΩ 1.8 A 2.