BTS410F2E3062A Description
N channel vertical power FET with charge pump, ground referenced CMOS patible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection OUT Charge pump Level shifter Rectifier Limit for unclamped ind.
BTS410F2E3062A Key Features
- µC patible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
- Most suitable for inductive loads
- Replaces electromechanical relays, fuses and discrete circuits