HYB18T1G800AF - 1 Gbit DDR2 SDRAM

This page provides the datasheet information for the HYB18T1G800AF, a member of the HYB-18T 1 Gbit DDR2 SDRAM family.

Product Overview

Infineon Technologies AG

Part number	HYB18T1G800AF
Manufacturer	Infineon Technologies AG
File Size	1.71 MB
Description	1 Gbit DDR2 SDRAM
Datasheet	HYB18T1G800AF Datasheet
Additional preview pages of the HYB18T1G800AF datasheet.

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60 333 667 4 12 12 45 57 Data Rate CAS Latency (CL) tRCD tRP tRAS tRC tck ns ns ns ns.
1.8V ± 0.1V Power Supply 1.8 V ± 0.1V (SSTL_18) compatible) I/O.
DRAM organisations with 4, 8 and 16 data in/outputs.
Double Da.

Other Datasheets by Infineon Technologies AG

Published: Apr 3, 2005 |