PTF180101 Datasheet (Infineon)

Part PTF180101
Description LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
Category Transistor
Manufacturer Infineon
Size 310.60 KB
Pricing from 99.99 USD, available from Component Stockers USA and Win Source.
Infineon

PTF180101 Overview

Key Specifications

Mount Type: Surface Mount
Pins: 3
Max Operating Temp: 200 °C
Min Operating Temp: -40 °C

Description

The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Typical EDGE performance
  • Average output power = 4.0 W
  • Gain = 19.0 dB
  • Efficiency = 28%
  • EVM = 1.1 % Typical WCDMA performance

Price & Availability

Seller Inventory Price Breaks Buy
Component Stockers USA 237 1+ : 99.99 USD View Offer
Win Source 5 3+ : 17.4359 USD
7+ : 14.3064 USD
11+ : 13.8594 USD
15+ : 13.4123 USD
View Offer