PTF180101S Datasheet (Infineon)

Part PTF180101S
Description LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
Category Transistor
Manufacturer Infineon
Size 310.60 KB
PTF180101S Datasheet (PDF) Download
Pricing from 18.7688 USD, available from Win Source and Worldway Electronics.
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Infineon

PTF180101S Overview

Key Specifications

Max Operating Temp: 200 °C

Description

The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Typical EDGE performance
  • Average output power = 4.0 W
  • Gain = 19.0 dB
  • Efficiency = 28%
  • EVM = 1.1 % Typical WCDMA performance
PTF180101S datasheet preview

Price & Availability

Seller Inventory Price Breaks Buy
Win Source 11 4+ : 18.7688 USD
8+ : 15.4008 USD
12+ : 14.9191 USD
16+ : 14.4375 USD		 View Offer
Worldway Electronics 15370 7+ : 5.3453 USD
10+ : 5.2384 USD
100+ : 5.0781 USD
500+ : 4.9177 USD		 View Offer

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