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PTF210301A

Manufacturer: Infineon
PTF210301A datasheet preview

Datasheet Details

Part number PTF210301A
Datasheet PTF210301A_InfineonTechnologiesAG.pdf
File Size 337.86 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301A page 2 PTF210301A page 3

PTF210301A Overview

The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210301A Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance
  • Average output power = 7.0 W
  • Gain = 16 dB
  • Efficiency = 25%
  • IM3 = -37 dBc Typical CW performance
  • Output power at P-1dB = 36 W
  • Gain = 15 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • 25 Efficiency 30 25
  • IM3 (dBc), ACPR (dBc)
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More Datasheets from Infineon

See all Infineon datasheets

Part Number Description
PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301E LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF210901E LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

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