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PTF210301E

PTF210301E is LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz manufactured by Infineon.
PTF210301E datasheet preview

PTF210301E Details

Part number PTF210301E
Datasheet PTF210301E Datasheet PDF (Download)
File Size 337.86 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301E page 2 PTF210301E page 3

PTF210301E Overview

The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210301E Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance
  • Average output power = 7.0 W
  • Gain = 16 dB
  • Efficiency = 25%
  • IM3 = -37 dBc Typical CW performance
  • Output power at P-1dB = 36 W
  • Gain = 15 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • 25 Efficiency 30 25
  • IM3 (dBc), ACPR (dBc)

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