PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

Product Overview

Infineon Technologies AG

Part number	PTF210301E
Manufacturer	Infineon Technologies AG
File Size	337.86 KB
Description	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
Datasheet	PTF210301E Datasheet
Additional preview pages of the PTF210301E datasheet.

The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

Broadband internal matching Typical two.
carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 =.
37 dBc Typical CW performance - Output power at P.
1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power Two.
Carrier WCDMA Drive.
Up f = 2140 MH.

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Published: Apr 16, 2005 |