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PTF210451 - LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz

Datasheet Summary

Description

The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Internal matching for wideband performance Typical two.
  • carrier WCDMA performance - Average output power = 11.5 W - Gain = 14 dB - Efficiency = 27% - IM3 =.
  • 37 dBc Typical CW performance - Output power at P.
  • 1dB = 50 W - Linear gain = 14 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power Two.
  • Carrier WCDMA Drive.

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Datasheet Details

Part number PTF210451
Manufacturer Infineon Technologies AG
File Size 406.91 KB
Description LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
Datasheet download datasheet PTF210451 Datasheet
Additional preview pages of the PTF210451 datasheet.

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Full PDF Text Transcription

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PTF210451 LDMOS RF Power Field Effect Transistor 45 W, 2110–2170 MHz Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Internal matching for wideband performance Typical two–carrier WCDMA performance - Average output power = 11.
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