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PTF210451E

PTF210451E is LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz manufactured by Infineon.
PTF210451E datasheet preview

PTF210451E Details

Part number PTF210451E
Datasheet PTF210451E Datasheet PDF (Download)
File Size 406.91 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451E page 2 PTF210451E page 3

PTF210451E Overview

The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF210451E Key Features

  • Internal matching for wideband performance Typical two-carrier WCDMA performance
  • Average output power = 11.5 W
  • Gain = 14 dB
  • Efficiency = 27%
  • IM3 = -37 dBc Typical CW performance
  • Output power at P-1dB = 50 W
  • Linear gain = 14 dB
  • Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drif
  • IM3 (dBc), ACPR (dBc)
  • 35 -40

PTF210451E Applications

  • Internal matching for wideband performance Typical two-carrier WCDMA performance

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