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PTF211301

PTF211301 is LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz manufactured by Infineon.
PTF211301 datasheet preview

PTF211301 Details

Part number PTF211301
Datasheet PTF211301 Datasheet PDF (Download)
File Size 449.03 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301 page 2 PTF211301 page 3

PTF211301 Overview

The PTF211301 is a 130 W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single and two carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF211301 Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz
  • Average output power = 28 W
  • Linear Gain = 13.5 dB
  • Efficiency = 25%
  • Intermodulation distortion = -37 dBc
  • Adjacent channel power = -42 dBc Typical CW performance, 2170 MHz, 28 V
  • Output power at P-1dB = 148 W
  • Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI dri
  • 30 -35 35 30 Efficiency IM3
  • 40 -45 -50 -55 -60 36 38

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