• Part: PTF211301A
  • Description: LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
  • Manufacturer: Infineon
  • Size: 449.03 KB
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Datasheet Summary

PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110- 2170 MHz Description The PTF211301 is a 130- W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two- carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features - - Broadband internal matching Typical two- carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion = - 37 dBc - Adjacent channel power = - 42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P- 1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human...