• Part: PTF211802A
  • Description: LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
  • Manufacturer: Infineon
  • Size: 169.15 KB
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Datasheet Summary

PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110- 2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double- diffused, GOLDMOS push- pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features - - Broadband internal matching Typical two- carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = - 37 dBc - ACPR < - 42 dBc Typical CW performance - Output power at P- 1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28...