Part PTF211802A
Description LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Category Transistor
Manufacturer Infineon
Size 169.15 KB
Infineon

PTF211802A Overview

Description

The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Broadband internal matching Typical two–carrier WCDMA performance
  • Average output power = 38 W
  • Gain = 15 dB
  • Efficiency = 25%
  • IM3 = –37 dBc
  • ACPR < –42 dBc Typical CW performance
  • Output power at P–1dB = 180 W
  • Efficiency (%), Gain (dB) 30 25 20 15 10 -35 IMD (dBc), ACPR (dB)
  • Gain Drain Efficiency IM3
  • Typ –37 15 25 Max