PTF211802E - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

Product Overview

Infineon Technologies AG

Part number	PTF211802E
Manufacturer	Infineon Technologies AG
File Size	169.15 KB
Description	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Datasheet	PTF211802E Datasheet
Additional preview pages of the PTF211802E datasheet.

The PTF211802 is a 180 W, internally matched, laterally double diffused, GOLDMOS push pull FET intended for WCDMA applications from 2110 to 2170 MHz.

Broadband internal matching Typical two.
carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =.
37 dBc - ACPR <.
42 dBc Typical CW performance - Output power at P.
1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two.
Carrier WCDMA Drive.
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Published: Apr 16, 2005 |