Datasheet4U Logo Datasheet4U.com
Infineon logo

PTF211802E

PTF211802E is LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz manufactured by Infineon.
PTF211802E datasheet preview

PTF211802E Details

Part number PTF211802E
Datasheet PTF211802E Datasheet PDF (Download)
File Size 169.15 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802E page 2 PTF211802E page 3

PTF211802E Overview

The PTF211802 is a 180 W, internally matched, laterally double diffused, GOLDMOS push pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

PTF211802E Key Features

  • Broadband internal matching Typical two-carrier WCDMA performance
  • Average output power = 38 W
  • Gain = 15 dB
  • Efficiency = 25%
  • IM3 = -37 dBc
  • ACPR < -42 dBc Typical CW performance
  • Output power at P-1dB = 180 W
  • Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • 40 -45 -50 -55
  • observe handling precautions!

PTF211802E Distributor

More datasheets by Infineon

See all Infineon parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts