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PTF211802E - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

Datasheet Summary

Description

The PTF211802 is a 180 W, internally matched, laterally double diffused, GOLDMOS push

pull FET intended for WCDMA applications from 2110 to 2170 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Broadband internal matching Typical two.
  • carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =.
  • 37 dBc - ACPR <.
  • 42 dBc Typical CW performance - Output power at P.
  • 1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two.
  • Carrier WCDMA Drive.
  • Up.

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Datasheet Details

Part number PTF211802E
Manufacturer Infineon Technologies AG
File Size 169.15 KB
Description LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Datasheet download datasheet PTF211802E Datasheet
Additional preview pages of the PTF211802E datasheet.

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Full PDF Text Transcription

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PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 2.
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