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PTF211802E - LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz

General Description

The PTF211802 is a 180 W, internally matched, laterally double diffused, GOLDMOS push

pull FET intended for WCDMA applications from 2110 to 2170 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Broadband internal matching Typical two.
  • carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 =.
  • 37 dBc - ACPR <.
  • 42 dBc Typical CW performance - Output power at P.
  • 1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two.
  • Carrier WCDMA Drive.
  • Up.

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Datasheet Details

Part number PTF211802E
Manufacturer Infineon Technologies AG
File Size 169.15 KB
Description LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
Datasheet download datasheet PTF211802E Datasheet

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Other Datasheets by Infineon Technologies AG

Part Number Description
PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211301A LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = –37 dBc - ACPR < –42 dBc Typical CW performance - Output power at P–1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power Two–Carrier WCDMA Drive–Up VDD = 28 V, IDQ = 2.