SMBT3904
NPN Silicon Switching Transistors
- High DC current gain: 0.1 m A to 100 m A
- Low collector-emitter saturation voltage
- For SMBT3904S:
Two (galvanic) internal isolated transistors with good matching in one package
- plementary types: SMBT3906... MMBT3906
- SMBT3904S: For orientation in reel see package information below
- Pb-free (Ro HS pliant) package
- Qualified according AEC Q101
SMBT3904...MMBT3904
Type SMBT3904/MMBT3904 SMBT3904S
Marking
Pin Configuration
Package s1A 1=B 2=E 3=C
- -
- SOT23 s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation TS ≤ 71°C, SOT23, SMBT3904 TS ≤ 115°C, SOT363, SMBT3904S Junction temperature Storage temperature
Thermal Resistance Parameter Junction
- soldering point1) SMBT3904/MMBT3904 SMBT3904S
Symbol VCEO VCBO VEBO IC Ptot
Tj Tstg
Symbol Rth JS
Value 40 60 6 200
330 250 150 -65 ... 150
Value
≤ 240 ≤ 140
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