SMBTA06U
SMBTA06U is NPN Silicon AF Transistor Array manufactured by Infineon.
NPN Silicon AF Transistor Array
High breakdown voltage Low collector-emitter saturation voltage plementary type: SMBTA56U (PNP) Two ( galvanic) internal isolated Transistors
5 6
3 2 1
VPW09197 with good matching in one package
C1 6
B2 5
E2 4
TR2 TR1
1 E1
2 B1
3 C2
EHA07178
Type SMBTA06U
Maximum Ratings Parameter
Marking s1G
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 80 80 4 500 1 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 115 °C Junction temperature Storage temperature m A A m A m W °C
Thermal Resistance Junction
- soldering point1) Rth JS
105
K/W
1For calculation of Rth JA please refer to Application Note Thermal Resistance
Nov-30-2001
Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C ICBO ICEO h FE ICBO V(BR)EBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit
80 80 4
- -
100 20 100
V n A µA n A
- Collector cutoff current
VCE = 60 V, IB = 0 DC current gain 1) IC = 10 m A, VCE = 1 V IC = 100 m A, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 m A, IB = 10 m A Base-emitter voltage 1) IC = 100 m A, VCE = 1 V
100 100
VCEsat...
