SMBTA06M
SMBTA06M is NPN Silicon AF Transistor manufactured by Siemens Semiconductor Group.
SMBTA 06M
NPN Silicon AF Transistor
- High breakdown voltage
- Low collector-emitter saturation voltage
- plementary type: SMBTA 56M (PNP)
4 5 3 2 1
VPW05980
Type SMBTA 06M
Marking Ordering Code Pin Configuration s1G Q62702-A3473
Package
1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 95 °C Junction temperature Storage temperature Symbol Value 80 80 4 500 1 100 200 1 150
- 65...+150 W °C m A A m A Unit V
VCEO VCBO VEBO IC I CM IB I BM Ptot Tj T stg
Thermal Resistance Junction ambient 1) Junction
- soldering point
Rth JA Rth JS
≤110 ≤55
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Jun-08-1998 1998-11-01
SMBTA 06M
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max. 100 20 100
Unit
V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CBO I CEO h FE
80 80 4
- V
I C = 1 m A, I B = 0
Collector-base breakdown voltage
I C = 100 µA, IB = 0 Emitter-base breakdown voltage I E = 10 µA, I C = 0 Collector cutoff current VCB = 80 V, I E = 0
Collector cutoff current
V n A µA n A
- VCB = 80 V, I E = 0 , TA = 150 °C
Collector cutoff current
VCE = 60 V, I B = 0
DC current gain 1)
I C = 10 m A, VCE = 1 V I C = 100 m A, V CE = 1 V
Collector-emitter saturation voltage1)
100 100
- 0.25 1.2 V...
