SMBTA06UPN
SMBTA06UPN is NPN/PNP Silicon AF Transistor Array manufactured by Infineon.
NPN/PNP Silicon AF Transistor Array
High breakdown voltage Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP
5 6
Transistors in one package Tape loading orientation
Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side
SC74_Tape
TR2 TR1 C1 6 B2 5 E2 4
3 2 1
VPW09197
Marking on SC74 package (for example W1s) corresponds to pin 1 of device
1 E1
2 B1
3 C2
EHA07177
Type SMBTA06UPN
Maximum Ratings Parameter
Marking s2P
Pin Configuration
Package
1=E 2=B 3=C 4=E 5=B 6=C SC74
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
Value 80 80 4 500 1 100 200 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation , TS = 115 °C Junction temperature Storage temperature m A A m A m W °C
Thermal Resistance
Junction
- soldering point1)
Rth JS
105
K/W
1For calculation of R th JA please refer to Application Note Thermal Resistance
Aug-21-2002
Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 m A, VCE = 1 V IC = 100 m A, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 m A, IB = 10 m A Base-emitter voltage 1) IC = 100 m A, VCE = 1 V VCEsat VBE(ON) h FE 100 100 0.25 1.2 V ICEO 100 n A ICBO 20 µA ICBO 100 n A V(BR)EBO 4 V(BR)CBO 80 V(BR)CEO 80 V Symbol min. Values typ. max. Unit
AC Characteristics Transition frequency IC = 20 m A, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 p F f T 100 MHz
1) Pulse test: t ≤ 300µs, D = 2%
Aug-21-2002
Total...
