BSC014N06NS - Power-Transistor

Infineon

General Description

1 Maximum ratings 3 T

Key Features

Optimized for high performance SMPS, e. g. sync. rec.
175°C rated.
100% avalanche tested.
Superior thermal resistance.
N‑channel.
Pb‑free lead plating; RoHS compliant.
Halogen‑free according to IEC61249‑2‑21.
Higher solder joint reliability due to enlarged source interconnection Product validation Fully qualified according to JEDEC for Industrial.

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BSC014N06NS power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	BSC014N06NS
Manufacturer	Infineon
File Size	1.44 MB
Description	Power-Transistor
Datasheet	BSC014N06NS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public BSC014N06NS Final datasheet MOSFET OptiMOS™ Power‑Transistor, 60 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 175°C rated • 100% avalanche tested • Superior thermal resistance • N‑channel • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Higher solder joint reliability due to enlarged source interconnection Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID QOSS QG(0V..10V) Key Performance Parameters Value Unit 60 V 1.