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BSC014N06NST - MOSFET

General Description

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Key Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 175 °C rated.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC014N06NST MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.45 mΩ ID 100 A QOSS 100 nC QG(0V..10V) 89 nC TDSON-8FL(enlargedsourceinterconnection) 8 7 65 1 2 34 4 3 2 1 5 67 8 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC014N06NST Package TDSON-8 FL Marking 014N06NT RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.