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BSC014N04LS Final datasheet
MOSFET
OptiMOS™ Power‑MOSFET, 40 V
Features
• Optimized for synchronous rectification • 175°C rated • Very low on‑state resistance RDS(on) • 100% avalanche tested • Superior thermal resistance • N‑channel, logic level • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Higher solder joint reliability due to enlarged source interconnection
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss Qg(0V..10V)
Key Performance Parameters
Value
Unit
40
V
1.