BSC110N06NS3G
BSC110N06NS3G is Power-Transistor manufactured by Infineon.
Type
OptiMOSTM3 Power-Transistor
Features
- Ideal for high frequency switching and sync. rec.
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
BSC110N06NS3 G
BSC110N06NS3 G
Product Summary VDS RDS(on),max ID
60 V 11 mW 50 A
Package
PG-TDSON-8
Marking
110N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100...
