BSC118N10NSG Overview
BSC118N10NS G OptiMOS™2 Power-Transistor 280 155 ±20 114 -55 ... 150 55/150/56 Unit A
BSC118N10NSG Key Features
- N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on)
- 150 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
- case R thJC
- ambient
- 1.1 K/W
- V 4 1 µA
- 2800 420 26 21 21 32
- 14 19 nC