BSC118N10NSG
BSC118N10NSG is Power-Transistor manufactured by Infineon.
BSC118N10NS G
OptiMOS™2 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
100 V 11.8 mΩ 71 A
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
PG-TDSON-8
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type BSC118N10NS G
Package PG-TDSON-8
Marking 118N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C, R thJA=45...
