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BSC118N10NSG - Power-Transistor

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 100 V 11.8 mΩ 71 A.
  • 150 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number BSC118N10NSG
Manufacturer Infineon Technologies
File Size 435.64 KB
Description Power-Transistor
Datasheet download datasheet BSC118N10NSG Datasheet
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BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID 100 V 11.
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