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Preliminary data
BSO 215 C
SIPMOS ® Small-Signal-Transistor
Features • Dual N- and P -Channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
N
P -20 0.1 -3.7 V Ω A
VDS RDS(on) ID
20 0.1 3.7
Enhancement mode
• Logic Level • Avalanche rated • dv/dt rated
Type BSO 215 C
Package SO 8
Ordering Code Q67041-S4025
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol N Continuous drain current
Value P
Unit A
ID
3.7 3 -3.7 -3 -14.8
T A = 25 °C T A = 70 °C
Pulsed drain current
I D puls EAS
14.8
T A = 25 °C
Avalanche energy, single pulse mJ 26 68 0.2 kV/µs 6 6 ±20 2 V W °C
I D = 3 A, V DD = 15 V, R GS = 25 Ω I D = -3.
BSO215C Datasheet
