IDH09SG60C Datasheet | Infineon

Features - Revolutionary semiconductor material - Silicon Carbide - Switching behavior benchmark - No reverse recovery / No forward recovery - Temperature independent switching behavior - High surge current capability - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Breakdown voltage tested at 20m A2) - Optimized for high temperature operation ..net - Lowest Figure Product Summary V DC QC I F; T C< 130 °C 600 15 9 V n C A of Merit QC/IF thin Q! 3G Diode designed for fast switching applications like: - SMPS e.g.; CCM PFC - Motor Drives; Solar Applications; UPS Type IDH09SG60C Package PG-TO220-2 Marking D09G60C Pin 1 C Pin 2 A Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 and M3.5 screws T j=25 °C VR= 0….480 V T C=25 °C Value 9 49 42 400 12 9 600 50 115 -55 ... 175 260 60 Ncm V V/ns W °C A2s Unit A Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque I F,max ∫i 2dt Rev. 2.3 page 1 2009-08-04 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R th JC R th JA Thermal resistance, junction- ambient, leaded 1.3 62 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.05 m A, T j=25 °C I F=9 A, T j=25 °C I F=9 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc...