IDH09SG60C - Schottky Diode

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery / No forward recovery.
Temperature independent switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

Datasheet Details

Part number	IDH09SG60C
Manufacturer	Infineon
File Size	250.86 KB
Description	Schottky Diode
Datasheet	IDH09SG60C Datasheet
Additional preview pages of the IDH09SG60C datasheet.

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Full PDF Text Transcription

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IDH09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation www.DataSheet4U.net • Lowest Figure Product Summary V DC QC I F; T C< 130 °C 600 15 9 V nC A of Merit QC/IF thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.

Published: Jul 7, 2011 |