Datasheet4U Logo Datasheet4U.com

IPB014N06N - Power Transistor

Key Features

  • Optimized for synchronous rectification.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, normal level.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB010N06N MOSFET Infineon
IPB011N04L Power Transistor Infineon
IPB011N04NF2S MOSFET Infineon
IPB013N06NF2S 60V MOSFET Infineon
IPB015N04L N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB011N04LG Power Transistor
IPB011N04NG OptiMOS3 Power Transistor
IPB015N04LG Power Transistor
IPB015N04NG Power Transistor
IPB016N06L3G Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID QOSS QG(0V..10V) IPB014N06N 60 V 1.