IPB014N06N Overview
Type OptiMOSTM Power-Transistor.
IPB014N06N Key Features
- Optimized for synchronous rectification
- 100% avalanche tested
- Superior thermal resistance
- N-channel, normal level
- Qualified according to JEDEC1) for target
IPB014N06N datasheet by Infineon.
| Part number | IPB014N06N |
|---|---|
| Datasheet | IPB014N06N-InfineonTechnologies.pdf |
| File Size | 583.42 KB |
| Manufacturer | Infineon |
| Description | Power Transistor |
|
|
|
Type OptiMOSTM Power-Transistor.
| Part Number | Description |
|---|---|
| IPB011N04LG | Power Transistor |
| IPB011N04NG | OptiMOS3 Power Transistor |
| IPB015N04LG | Power Transistor |
| IPB015N04NG | Power Transistor |
| IPB016N06L3G | Power Transistor |
| IPB017N06N3G | Power Transistor |
| IPB019N06L3G | Power Transistor |
| IPB019N08N3G | Power Transistor |
| IPB009N03LG | MOSFET |
| IPB021N06N3G | Power-Transistor |