Datasheet4U Logo Datasheet4U.com

IPB04CNE8NG - Power-Transistor

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – IPB04CNE8NG

Datasheet Details

Part number IPB04CNE8NG
Manufacturer Infineon Technologies
File Size 463.12 KB
Description Power-Transistor
Datasheet download datasheet IPB04CNE8NG Datasheet
Additional preview pages of the IPB04CNE8NG datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com IPB04CNE8N G IPP04CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 3.
Published: |