IPB070N06LG Datasheet | Infineon

Features - For fast switching converters and sync. rectification - N-channel enhancement - logic level - 175 °C operating temperature - Avalanche rated - Pb-free lead plating, Ro HS pliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A Type IPB070N06L G IPP070N06L G Type IPB070N06L G Package IPP070N06L G Marking Package PG-TO263-3 PG-TO263-3 070N06L PG-TO220-3 Marking PG-TO220-3 070N06L 070N06L 070N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 80 320 450 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 214 -55 ... 175 55/175/56 Current is limited by bondwire; with an R th JC=0.7 K/W the chip is able to carry 114 A. See figure 3 Rev. 1.22 page 1 2006-04-07 .. IPB070N06L G IPP070N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=150 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A V GS=4.5 V, I D=53 A V GS=10 V, I D=80 A, SMD version V GS=4.5 V, I D=53 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 60 1.2 1.6 0.01 2 1 µA V 0.7 62 40 K/W Values typ. max. Unit - 1 - 10 5.8 7.1...