IPB075N04LG Datasheet | Infineon

Features - Fast switching MOSFET for SMPS - Optimized technology for DC/DC converters - Qualified according to JEDEC for target applications - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 100% Avalanche tested - Pb-free plating; Ro HS pliant 1) Product Summary V DS R DS(on),max ID 40 7.5 50 V mΩ A PG-TO263-3 Type IPB075N04L G Package PG-TO263-3 Marking 075N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage 1) Value 50 46 50 40 350 50 20 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω m J V J-STD20 and JESD22 Rev. 1.0 page 1 2007-12-11 .. IPB075N04L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 56 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm² cooling area 4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=20 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate resistance Transconductance 2) 3) 4) - - 2.7 62 40 K/W 40 1.2 - 0.1 2...