IPB08CN10NG Description
IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 Power-Transistor.
IPB08CN10NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification Type IPB08CN10N G IPI08CN10N G IPP08CN10N G
- 10 1 6.1