IPB08CNE8NG

Manufacturer: Infineon

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IPB08CNE8NG
Datasheet	IPB08CNE8NG IPB-08CNE Datasheet (PDF)
File Size	498.90 KB
Manufacturer	Infineon
Description	Power-Transistor

IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor.

N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS pliant
Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification Type IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G
10 1 6.1